NDLI: Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating

Content Provider	IEEE Xplore Digital Library
Author	Iosad, N.N. Balashov, D.V. Kupriyanov, M.Yu. Polyakov, S.N. Roddatis, V.V.
Copyright Year	2002
Abstract	We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V/sub g/=2/spl Delta//e/spl ap/4.0 mV, subgap leakage R/sub sg//R/sub n//spl ap/6.0, current density measured at the gap current rise J/sub g//spl ap/1.5 kA/cm/sup 2/. The (111)-textured NbN with transition temperature T/sub c//spl ap/16 K have been deposited at ambient substrate temperature. Phase composition and structure of the NbN films were investigated by X-ray diffraction analysis (XRD). It was found that the films have a structure close to the cubic /spl delta/-NbN (JCPDS card N38-11556) and the phase composition and intrinsic stress in NbN depend on Ar and N/sub 2/ partial pressure during DC magnetron sputtering. Cross-sectional TEM analysis showed that in-situ deposition of thin Al layer in the base Nb/Al/NbN electrode provides effective planarization of its surface and the result in improvement of tunnel junction parameters.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	2805
Ending Page	2808
Page Count	4
File Size	628096
File Format	PDF
ISSN	10518223
Volume Number	7
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Niobium Temperature Magnetic analysis Josephson junctions Voltage Current density Density measurement Current measurement X-ray diffraction X-ray scattering
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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