NDLI: Measurement of Epitaxial NbN/AlN/NbN Tunnel Junctions With a Low Critical Current Density at Low Temperature

Content Provider	IEEE Xplore Digital Library
Author	Qiu, W. Terai, H. Wang, Z.
Copyright Year	2002
Abstract	Superconducting qubit circuits require high quality low critical current density Josephson tunnel junctions. We have developed high quality epitaxial NbN/AlN/NbN tunnel junctions with critical current density, J_c, ranging from as low as a few A/cm² to a few tens of kA/cm². In this work, we measured current-voltage characteristics for junctions with a J_c ~ 32 A/cm² in the temperature range from 17 mK to above 6.7 K. All the junctions are in good quality and have a high gap voltage (>; 5.5 mV). We found that the junctions' sub-gap resistances were temperature dependent above 2.5 K and saturated at temperatures below 2.5 K. A junction sub-gap leakage current I_r of about 23 pA was measured. The voltage noise power spectral density for 3 junctions with different sizes has been measured at the base temperature of 17 mK with the junctions biased above the gap voltage. The spectral densities clearly show 1/f behavior at low frequency and are proportional to the junction's linear dimension.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	135
Ending Page	138
Page Count	4
File Size	316289
File Format	PDF
ISSN	10518223
Volume Number	21
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Junctions Temperature measurement Current measurement Noise Leakage current Josephson junctions Book reviews $1/f$ noise Decoherence epitaxial Josephson junction quantum computing
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

1/f noise in high current density NbN/AlN/NbN tunnel junctions

Characterization of NbN/AlN/NbN tunnel junctions

Correlation between the 1/f noise parameter and the Andreev conductance in epitaxial NbN/AlN/NbN junctions

Characterization of low frequency noise in epitaxial NbN/AlN/NbN tunnel junctions

Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating

NbN/AlN/NbN tunnel junctions fabricated at ambient substrate temperature

Characterization of NbN Tunnel Junctions With Radical-Nitrided $hbox{AlN}_{rm x}$ Barriers

High current density NbN/AlN/NbN tunnel junctions for submillimeter wave SIS mixers

Sub-gap leakage in Nb/AlO/sub x//Nb and Al/AlO/sub x//Al Josephson junctions

Measurement of Epitaxial NbN/AlN/NbN Tunnel Junctions With a Low Critical Current Density at Low Temperature

Similar Documents

1/f noise in high current density NbN/AlN/NbN tunnel junctions

Characterization of NbN/AlN/NbN tunnel junctions

Correlation between the 1/f noise parameter and the Andreev conductance in epitaxial NbN/AlN/NbN junctions

Characterization of low frequency noise in epitaxial NbN/AlN/NbN tunnel junctions

Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating

NbN/AlN/NbN tunnel junctions fabricated at ambient substrate temperature

Characterization of NbN Tunnel Junctions With Radical-Nitrided $hbox{AlN}_{rm x}$ Barriers

High current density NbN/AlN/NbN tunnel junctions for submillimeter wave SIS mixers

Sub-gap leakage in Nb/AlO/sub x//Nb and Al/AlO/sub x//Al Josephson junctions

Measurement of Epitaxial NbN/AlN/NbN Tunnel Junctions With a Low Critical Current Density at Low Temperature