NDLI: Possible three terminal HTS transistor device

Content Provider	IEEE Xplore Digital Library
Author	Gulian, A.M. Van Vechten, D.
Copyright Year	2002
Abstract	A non-zero, gauge invariant potential /spl mu/ has been recognized since 1972 to occur in superconductors in various non-equilibrium circumstances. It is central to the description of the time dependent properties. Non-zero values of this potential cause gap suppression. Thus if the local value of the potential /spl mu/ can be made sufficiently large, the material can be locally switched into the normal state. Superfluid flow would no longer exist and a voltage would be required to sustain a preexisting current. The S to N switching time is expected to be sub-picosecond for Nb and faster for the HTS materials. The time scale for the restoration of superconductivity will be set by the dynamic branch mixing time, sub-nanosecond for Nb. Thus the main difficulty in designing a superconducting transistor analog using this effect is in producing a sufficiently large value of /spl mu/. We suggest that an appropriate mechanism is provided by the injection of a current of predominantly electron- or hole-like character from a doped non-degenerate semiconductor into a thin, current carrying superconducting film.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	3096
Ending Page	3098
Page Count	3
File Size	398304
File Format	PDF
ISSN	10518223
Volume Number	7
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High temperature superconductors Superconducting materials Equations Niobium Superconducting films Josephson junctions Physics USA Councils Superconducting devices Dynamic voltage scaling
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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