NDLI: Transport critical current at 4.2 K of pure and MgO-doped Bi 2212 tapes

Content Provider	IEEE Xplore Digital Library
Author	Zani, L. Menget, M. Regnier, P. Le Bars, J. Dechambre, T. Nicolas, P.
Copyright Year	2002
Abstract	2/spl times/3.5 /spl mu/m thick Bi 2212 tapes have been prepared by oxidation reaction of precursors deposited electrolytically in a sequential way on both sides of a 50 /spl mu/m thick Ag tape. To try and increase their critical current density MgO doping was attempted. For the sake of making the comparison as differential as possible a sample of Bi 2212 precursors was prepared by electrodeposition. Part of it was directly heat treated, whereas the left was electrolytically plated before with MgO to get the average composition Bi/sub 2/Sr/sub 2/Ca/sub 1/Cu/sub 2/Mg/sub 0.1/. It was found that the transport J/sub c/ at 4.2 K of the MgO-doped specimen was about 1.4 times higher than that of the other in self field conditions and remained still 1.1 times higher in a 7 tesla field applied normally to the tape. The ratio of J/sub c/(B/spl par/(a,b)) to J/sub c/(B/spl perp/(a,b)) starting from 1 for zero applied field was observed to reach 2 in a field. Finally, the pinning potential of the materials were determined accounting silver backing correction (dependence resistivity as a function of magnetic field is incidentally presented too).
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	1683
Ending Page	1686
Page Count	4
File Size	806140
File Format	PDF
ISSN	10518223
Volume Number	7
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Critical current Bismuth Magnetic materials Oxidation Critical current density Doping Strontium Silver Conductivity Magnetic fields
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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