NDLI: Correlation between ramp morphology and properties of ramp-type junctions

Content Provider	IEEE Xplore Digital Library
Author	Horstmann, C. Leinenbach, P. Dittmann, R. Memmert, U. Hartmann, U. Braginski, A.I.
Copyright Year	2002
Abstract	The correlation between the morphology of ramps in YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// thin films prepared by ion-beam etching and the properties of ramp-type junctions was investigated in detail. Ramp-type junctions were fabricated using PrBa/sub 2/Cu/sub 2.9/Ga/sub 0.1/O/sub 7-/spl delta// as the barrier material. We examined the influence of different fabrication parameters on the ramp properties by Atomic Force Microscopy (AFM). Properties of junctions, which were fabricated by employing a post-baking of the etching mask, were compared with those of junctions prepared without any special treatment. Junctions containing the improved ramps showed I-V characteristics and a temperature dependence of the normal resistance R/sub N/ typical for resonant tunneling. The other junctions, having also an order of magnitude lower values of R/sub N/, exhibited a metallic temperature dependence of R/sub N/, which can be possibly explained by contributions from metallic channels in the PrBa/sub 2/Cu/sub 2.9/Ga/sub 0.1/O/sub 7-/spl delta//-barrier.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	2844
Ending Page	2847
Page Count	4
File Size	689159
File Format	PDF
ISSN	10518223
Volume Number	7
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Morphology Etching Fabrication Optical films Shape Plasma temperature Atomic force microscopy Pulsed laser deposition Annealing Milling
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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