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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chun-Shan Tsui |
| Copyright Year | 2009 |
| Description | Author affiliation: Pitotech, No.17,Lane 95, Tzu Chiang Rd., Chang Hua City, Taiwan (Chun-Shan Tsui) |
| Abstract | In this paper, a finite element numerical (FEM) simulation via COMSOL Multiphysics was carried out to study the performance of micro capacitive pressure sensor. At first stage, the effect of fabrication was considered. At second stage, calculating the relationship between capacitance and applied pressure under different operation condition, including bonding temperature, thermal expansion coefficient of silicon and thickness of pressurized compartment by using Taguchi Method. Finally, finding the best condition of fabrication and operation. The simulation showed that capacitance of the sensor was as the function of the operating pressure. The higher bonding temperature was fabricated, the lower capacitance can be achieved under the same applied load. And thinner thickness of the pressurized compartment provided good resolution. Thus, the performance of micro capacitive pressure sensor can be predicted with qualitative analysis and with quantitative analysis via numerical simulation. |
| Starting Page | 39 |
| Ending Page | 42 |
| File Size | 1625812 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424443413 |
| DOI | 10.1109/IMPACT.2009.5382303 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-10-21 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Fabrication Temperature sensors Thermal expansion Capacitance Numerical simulation Capacitive sensors Silicon Performance analysis Finite element methods Bonding |
| Content Type | Text |
| Resource Type | Article |
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