NDLI: An in-depth study on the fabrication of 1055–1064 nm multi-quantum-well and super-lattice laser diodes

Content Provider	IEEE Xplore Digital Library
Author	Wu, A.H. Tseng, H.C. Hu, C. Wan, C.T. Su, Y.K. Tsau, S.
Copyright Year	2009
Description	Author affiliation: Laser Lightwave Technology Department, Laser Application Technology Center, ITRI, 73445, Taiwan, R.O.C. (Su, Y.K.) \|\| Laser and Application Laboratory, Laser Application Technology Center, ITRI, 73445, Taiwan, R.O.C. (Tsau, S.) \|\| Institute of Electronics, Kun Shan University, 71003, Taiwan, R.O.C. (Wu, A.H.; Tseng, H.C.) \|\| Institute of Microelectronics, National Cheng Kung University, 70101, Taiwan, R.O.C. (Hu, C.; Wan, C.T.)
Abstract	The InGaAs/GaAs multi-quantum-well as well as the AlGaAs/GaAs and the GaAsP/GaAs super-lattice laser diodes were successfully fabricated by low-pressure MOCVD system, and a number of novel structures were explored in this systematic investigation. The strain-relief effect and the composition of cladding layers were analyzed in detail. Via a series of growth experiments, we concluded that better lasing efficiency and the minimum threshold current could be obtained from the sample made up of the AlGaAs/GaAs structure combined with the 60% Aluminum content of the AlGaAs cladding layer.
Starting Page	100
Ending Page	103
File Size	1677198
Page Count	4
File Format	PDF
ISBN	9781424443413
DOI	10.1109/IMPACT.2009.5382170
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-21
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor materials Optical device fabrication Gallium arsenide Quantum well lasers Indium gallium arsenide Optical materials Diode lasers Semiconductor diodes Optical modulation Optical noise
Content Type	Text
Resource Type	Article

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