NDLI: Etching Behavior of Silicon Using CO2 Laser

Content Provider	IEEE Xplore Digital Library
Author	Chung, C.K. Wu, M.Y. Hsiao, E.J. Sung, Y.C.
Copyright Year	2007
Description	Author affiliation: Dept. of Mech. Eng., National Cheng Kung Univ., Tainan (Chung, C.K.; Wu, M.Y.; Hsiao, E.J.)
Abstract	In this paper, we extended the silicon (Si) etching behavior using $CO_{2}$ laser with glass attached to the Si backside. The $CO_{2}$ laser with a wavelength of 10.64 mum is not absorbed by Si material and cannot do any micromachining for pure Si. However, Si becomes able to be etched by $CO_{2}$ laser as we put a glass below Si. The etching occurs from the top surface of Si downward to the bottom. If the time is enough long, it will etch through the Si wafer to be a hole structure. The Si etching depth increases with increasing laser power and pass number. The diameters of hole vary with the laser power, pass number and scanning speed. The mechanism may be involved in the interaction between photon, thermal and electron properties of materials to change the Si absorption behavior. It needs further studying in future and will be a promising technology in Si micromachining for the application of microdevices and MEMS.
Starting Page	59
Ending Page	62
File Size	365523
Page Count	4
File Format	PDF
ISBN	1424406102
DOI	10.1109/NEMS.2007.352129
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-01-16
Publisher Place	Thailand
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Silicon Glass Optical materials Micromachining Power lasers Surface waves Surface emitting lasers Electrons Mechanical factors glass CO2 laser Si MEMS
Content Type	Text
Resource Type	Article

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