NDLI: The Effect of the TiOx Line Width on the Tunneling Phenomenon

Content Provider	IEEE Xplore Digital Library
Author	Qinggang Liu Botao Hu Chaoyan Zhang Sen Qi Xiaotang Hu
Copyright Year	2007
Description	Author affiliation: State key Lab of Precision Meas. Technol. & Instruments, Tianjin Univ. (Qinggang Liu; Botao Hu; Chaoyan Zhang; Sen Qi; Xiaotang Hu)
Abstract	During the study of novel ultra fast photoconductive switch (PCSS), ultra fine oxidized titanium (TiOx) lines are formed on the surface of titanium (Ti) layer by the atomic force microscope (AFM) tip acting as a selective anodization electrode. The Ti layers are about 3-5nm-thick on the GaAs substrates and formed by magnetron sputtering method. The Ti-TiOx-Ti construction forms metal-insulator-metal (MIM) tunneling junction, and TiOx works as an energy barrier for the electrons. In order to illustrate the effect of the TiOx line width on the tunneling phenomenon and to determine the narrowest TiOx line as well as its forming conditions which can not lead to the breakdown of the tunneling junction, TiOx lines with different widths are fabricated by changing the ambient humidity. The I-V characteristics of tunneling junctions with different TiOx width are measured. The results indicate that the narrowest TiOx line about 16nm fabricated between two electrodes of the PCSS could not lead to the breakdown of the tunneling junction when the voltage between two electrodes is 6V.
Starting Page	467
Ending Page	471
File Size	5669454
Page Count	5
File Format	PDF
ISBN	1424406102
DOI	10.1109/NEMS.2007.352060
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-01-16
Publisher Place	Thailand
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling Electrodes Switches Titanium Atomic force microscopy Breakdown voltage Photoconductivity Atomic layer deposition Gallium arsenide Sputtering tunneling junction AFM tip induced anodic oxidation photoconductive semiconductor switches (PCSS) Ti oxidation wires
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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