NDLI: RF-TSVs compatible with harsh-environment post-processing for “via-first” 3D integration

Content Provider	IEEE Xplore Digital Library
Author	Gueye, R. Lee, S.W. Vitale, W.A. Truax, S. Akiyama, T. Roman, C. Ionescu, A. Hierold, C. Briand, D. de Rooij, N.F.
Copyright Year	2013
Description	Author affiliation: Dept. of Mech. & Process Eng., ETH Zurich, Zurich, Switzerland (Lee, S.W.; Truax, S.; Roman, C.; Hierold, C.) \|\| Nanoelectronic Device Lab. (NanoLab), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland (Vitale, W.A.; Ionescu, A.) \|\| Actuators & Microsyst. Lab. (SAMLAB), Ecole Polytech. Fed. de Lausanne (EPFL), Neuchatel, Switzerland (Gueye, R.; Akiyama, T.; Briand, D.; de Rooij, N.F.)
Abstract	Platinum TSVs compatible with harsh-environment post-processing were fabricated on an SOI wafer. This study was part of a larger project for the development of a SWCNT resonator, 3D-integrated, in a “via-first” approach, with its driving electronics. After their passivation, they are compatible with the harsh-environment post-processes necessary for the fabrication of the SWCNT resonator: the growth of CNT at a high temperature of 850 °C in an oxidizing environment, and their release in concentrated HF solution. The TSV metallization formed a stable ohmic contact with the silicon device layer on which the CNT resonator will be standing. We present RF (radio frequency) simulations correlated with RF measurements of the Pt-TSVs from 0.3 to 5 GHz. A reflection coefficient of -20 dB and transmission coefficient of -4 dB were measured at 5 GHz.
Starting Page	830
Ending Page	833
File Size	833711
Page Count	4
File Format	PDF
ISBN	9781467359832
ISSN	21641641
DOI	10.1109/Transducers.2013.6626895
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Silicon Temperature measurement Ohmic contacts Gold Silicon devices Frequency measurement harsh environment RF TSV Platinum S-parameter via-first ohmic contact high temperature
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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