NDLI: Through Silicon Vias and thermocompression bonding using inkjet-printed gold nanoparticles for heterogeneous MEMS integration

Content Provider	IEEE Xplore Digital Library
Author	Quack, N. Sadie, J. Subramanian, V. Wu, M.C.
Copyright Year	2013
Description	Author affiliation: Berkeley Sensor & Actuator Center, Univ. of California, Berkeley, Berkeley, CA, USA (Quack, N.; Wu, M.C.) \|\| Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA (Sadie, J.; Subramanian, V.)
Abstract	We present a novel technique for heterogeneous integration using gold filled Through Silicon Vias (TSV) and thermocompression bond bumps formed in a single fabrication step, using gold nanoparticles dispensed by inkjet printing. Gold-filled TSV arrays (12 × 12, via radius 50μm, pitch 250μm) have been demonstrated using this method. Void free, filled TSVs are reported, and thermocompression bonding yielded seamless interfaces. Die shear tests show good bond strength, and sub-Ω via resistances were measured. The presented integration process exhibits a low temperature budget (≤250°C), allows good alignment, and is compatible with substrates of different sizes and materials, enabling the heterogeneous integration of known-good-dies (KGD) which may have been fabricated in different technologies.
Starting Page	834
Ending Page	837
File Size	1330445
Page Count	4
File Format	PDF
ISBN	9781467359832
ISSN	21641641
DOI	10.1109/Transducers.2013.6626896
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Through-silicon vias Printing Gold Electrical resistance measurement Silicon Bonding Filling Known-Good-Die (KGD) Through Silicon Via (TSV) 3D Integration Nanoparticle Inkjet-Printing MEMS Flip-Chip Bonding Chip Scale Packaging (CSP)
Content Type	Text
Resource Type	Article

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