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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cao, Z. Yuan, Y. He, G. Peterson, R.L. Najafi, K. |
| Copyright Year | 2013 |
| Description | Author affiliation: Center for Wireless Integrated MicroSensing & Syst. (WIMS), Univ. of Michigan, Ann Arbor, MI, USA (Cao, Z.; Yuan, Y.; He, G.; Peterson, R.L.; Najafi, K.) |
| Abstract | In this paper, we present a fabrication process for an extremely compact, multi-layer, vertically-stacked fused silica microsystem. The system contains six fused silica layers in a total volume of less than 13 $mm^{3}.$ In the package are seven capacitive sensors designed as a six-degree of freedom inertial measurement unit plus a resonant timing device. Sixty-eight vertical electrical feedthroughs run through all six layers. Three key technologies are introduced: the fabrication of electrostatic devices on fused silica, the creation of through wafer vias in multiple layers of fused silica and stack bonding for 3-D integration of fused silica devices. The presented fused silica technology can be used for extreme miniaturization and integration of many future MEMS microsystems. |
| Starting Page | 810 |
| Ending Page | 813 |
| File Size | 1551943 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467359832 |
| ISSN | 21641641 |
| DOI | 10.1109/Transducers.2013.6626890 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Bonding Silicon compounds Gold Sensors Micromechanical devices inertial sensors Three-dimensional integration fused silica microsystem through wafer via |
| Content Type | Text |
| Resource Type | Article |
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