NDLI: CMOS MEMS: A key technology towards the “More than Moore” era

Content Provider	IEEE Xplore Digital Library
Author	Fang, W. Li, S.-S. Cheng, C.-L. Chang, C.-I. Chen, W.-C. Liu, Y.-C. Tsai, M.-H. Sun, C.
Copyright Year	2013
Description	Author affiliation: Inst. of NanoEngineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan (Chang, C.-I.; Liu, Y.-C.; Tsai, M.-H.; Sun, C.) \|\| Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan (Fang, W.; Li, S.-S.; Cheng, C.-L.; Chen, W.-C.)
Abstract	The mature CMOS fabrication processes are available in many IC foundries. It is cost-effective to leverage the existing CMOS fabrication technologies to implement MEMS devices. On the other hand, the MEMS devices could also add values to the IC industry as the Moore's law reaching its limit. The CMOS MEMS could play a key role to bridge the gap between the CMOS and MEMS technologies. The CMOS MEMS also offers the advantage of monolithic integration of ICs and micro mechanical components. This study introduces the post-CMOS processes to implement and integrate various MEMS transducers after the standard CMOS processes. The wafer bonding and thinning technology will further add variety of CMOS and MEMS integration. Note that other process platforms (e.g. poly-Si, CNT, glass, metal, etc.) are also of importance for different MEMS applications. In future, these process platforms could help to enhance the diversification and performance of on-chip devices as we move towards the “More than Moore” era.
Starting Page	2513
Ending Page	2518
File Size	1781814
Page Count	6
File Format	PDF
ISBN	9781467359832
ISSN	21641641
DOI	10.1109/Transducers.2013.6627317
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromechanical devices CMOS integrated circuits Silicon Metals Temperature sensors Fabrication Sensors integration CMOS MEMS Fabrication platform
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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