NDLI: Fabrication of cnfets with low-resistance electrical contacts

Content Provider	IEEE Xplore Digital Library
Author	Liu, W. Chikkadi, K. Lee, S.W. Hierold, C. Haluska, M.
Copyright Year	2013
Description	Author affiliation: Micro & Nanosyst., ETH Zurich, Zurich, Switzerland (Liu, W.; Chikkadi, K.; Lee, S.W.; Hierold, C.; Haluska, M.)
Abstract	Poor electrical contacts are obstacles for the application of carbon nanotube field-effect transistors (CNFETs) fabricated by lithography-based processes. One of the most influential factors is the resist residues existing at the metal-SWNT interface. However, the conventional resist removal approaches are not compatible to the SWNT-based fabrication process. Here we present an approach using an atomic layer deposition (ALD) of alumina to protect SWNTs from the image resists. As compared to other techniques, the ALD yields a uniform layer of $Al_{2}O_{3}$ on $SiO_{2}$ and the alumina layer can be easily and completely removed from the SWNTs prior to metal evaporation. By utilizing such a protective layer, the cleanliness of the SWNTs is improved. Consequently, the distribution of on-resistances is narrowed and the mean value of the on-resistances is reduced to 38 KΩ from 52 KΩ for the CNFETs fabricated with and without the protective layer respectively. The simplicity of this approach makes it be easily integrated to other SWNT-based process flows.
Starting Page	2009
Ending Page	2012
File Size	800621
Page Count	4
File Format	PDF
ISBN	9781467359832
ISSN	21641641
DOI	10.1109/Transducers.2013.6627191
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resists CNTFETs Metals Carbon nanotubes Fabrication Contacts Lithography low on-resistance CNFETs metal-SWNT interface resist residues protective layer
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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