NDLI: Ohmic contacts on n-type polycrystalline silicon carbide with Ti/TaSi/Pt

Content Provider	IEEE Xplore Digital Library
Author	Jin, S. Fu, X.A. Mehregany, M.
Copyright Year	2009
Description	Author affiliation: Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, USA (Jin, S.) \|\| Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, OH 44106, USA (Mehregany, M.) \|\| Chemical Engineering, University of Louisville, KY 40292, USA (Fu, X.A.)
Abstract	We report a thermodynamically-stable Ti/TaSi/Pt Ohmic contact on n-type, heavily-nitrogen-doped low-pressure chemical vapor deposited polycrystalline 3C-silicon carbide; this Ohmic contact metallization is suitable for stable high temperature operation. The contact shows excellent linearity and has a specific contact resistance (SCR) as low as $2×10^{−5}$ Ω-cm, directly after sequential sputtering of 100 nm of Ti, 400 nm of TaSi and 200 nm of Pt. The SCR of the metallization following a 20-mins anneal in nitrogen ambient at 600°C decreases to $3.9×10^{−6}$ Ω-cm. The contact remains Ohmic throughout 1000 hours of aging in air at 550°C. Auger electron spectroscopy has been used to analyze the metal/semiconductor interface to understand the prevailing reactions in this metal-semiconductor contact.
Starting Page	1083
Ending Page	1086
File Size	669705
Page Count	4
File Format	PDF
ISBN	9781424441907
e-ISBN	9781424441938
DOI	10.1109/SENSOR.2009.5285947
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ohmic contacts Silicon carbide Metallization Thyristors Chemicals Temperature Linearity Contact resistance Sputtering Annealing platinum Ohmic contact silicon carbide titanium tantalum silicide
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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