NDLI: Harsh environment temperature sensor based on 4H-Silicon carbide PN diode

Content Provider	IEEE Xplore Digital Library
Author	Nuo Zhang Pisano, A.P.
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA (Nuo Zhang; Pisano, A.P.)
Abstract	In this paper, we present a high-performance temperature sensor based on 4H-SiC pn diode which can stably operate in a temperature range from 20 to 600°C. The linear temperature dependence of the forward voltage at a constant current and the exponential temperature dependence of the reverse current at a constant voltage are used for sensing temperature variation. At a forward current of 1 μA, the device achieves a sensitivity of 2.8 mV/K. In the reverse biased mode, the linear relationship of logI versus 1/T can be used for temperature sensing. For the first time, a 4H-SiC pn diode is used for the development of high temperature sensor operating up to 600°C. This type of sensor can be integrated with SiC circuitry to create a sensing module that is capable of working at extremely high temperatures.
Starting Page	1016
Ending Page	1019
File Size	647247
Page Count	4
File Format	PDF
ISBN	9781467359832
ISSN	21641641
DOI	10.1109/Transducers.2013.6626942
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Silicon carbide Temperature measurement Schottky diodes Temperature dependence Sensitivity Harsh Environment Silicon Carbide PN Diode Temperature Sensor High Sensitivity Integrated Circuit Compatible
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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