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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hikichi, K. Matsuzaki, S. Nonomura, Y. Funabashi, H. Hata, Y. Esashi, M. Tanaka, S. |
| Copyright Year | 2013 |
| Description | Author affiliation: Micro Syst. Integration Center (μSIC), Tohoku Univ., Sendai, Japan (Hikichi, K.; Matsuzaki, S.; Esashi, M.; Tanaka, S.) || Toyota Central R&D Labs., Inc., Nagakute, Japan (Nonomura, Y.; Funabashi, H.; Hata, Y.) |
| Abstract | This paper compares different diffusion barriers for thin film transient liquid phase (TLP) bonding. Thin film TLP bonding has some advantages such as low process temperature and a large tolerance of bonding surface roughness. However, metal diffusion phenomena in TLP bonding is so complicated that bonding strength is dependent on metal systems. In this study, Sn-Cu TLP system was selected and its bonding strengths with several diffusion barriers were evaluated by die shear test. The microstructure of the bonded metal part was examined by scanning electron microscopy and energy dispersive X-ray spectrometry. The diffusion barriers of multilayered Cu/Cr, Cr-Cu and Ni worked, and the best bonding strength was obtained using Au/Sn/Cu/Cr-Cu/Cr metal system (10/200/1000/100/100 nm), where Cu thickness is doubled compared with the other samples. This paper also describes a new wafer bonder in which alignment, surface treatment and bonding can be performed without breaking vacuum. |
| Starting Page | 1071 |
| Ending Page | 1074 |
| File Size | 703236 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467359832 |
| ISSN | 21641641 |
| DOI | 10.1109/Transducers.2013.6626956 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Bonding Tin Nickel Gold Sputtering Substrates Shear bonding strength Wafer-level packaging Transient liquid phase (TLP) bonding Copper tin Diffusion barrier |
| Content Type | Text |
| Resource Type | Article |
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