NDLI: Al-Al thermocompression bonding for wafer-level MEMS packaging

Content Provider	IEEE Xplore Digital Library
Author	Malik, N. Schjolberg-Henriksen, K. Poppe, E. Finstad, T.G.
Copyright Year	2013
Description	Author affiliation: Centre for Mater. Sci. & Nanotechnol., Univ. of Oslo, Oslo, Norway (Malik, N.; Finstad, T.G.) \|\| Dept. of Microsyst. & Nanotechnol., SINTEF ICT, Oslo, Norway (Schjolberg-Henriksen, K.; Poppe, E.)
Abstract	The Al-Al thermocompression bonding is studied on test structures suitable for wafer level packaging of MEMS devices. Si wafers with protruding frame structures have been bonded to planar Si wafers all covered with a 1 μm sputtered Al film. The varied bonding process variables were temperature (400 °C-550 °C), bonding force (18-36 kN) and frame widths (100 μm, 200 μm, rounded or sharp corners). The delamination caused by dicing and pull tests is systematically studied. It is concluded that bonding is incomplete at 400 °C, with a low dicing yield. The quality of the bonding is increased by increasing bonding temperature and force as expected. The fractured surfaces and the bonding strength have been studied in detail. The test structures showed an average strength of 20-50 MPa for bonding at or above 450 °C. The current study indicates that strong Al-Al thermocompression bonds can be achieved at or above 450 °C for a typical MEMS bond frame.
Starting Page	1067
Ending Page	1070
File Size	996562
Page Count	4
File Format	PDF
ISBN	9781467359832
ISSN	21641641
DOI	10.1109/Transducers.2013.6626955
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bonding Silicon Micromechanical devices Force Temperature measurement Surface cracks Metals Bond strength MEMS Thermocompression bonding Bond force Dicing yield Cohesive Si fracture
Content Type	Text
Resource Type	Article

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