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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ding, W.X. McCorkle, D.L. Pinnaduwage, L.A. |
| Copyright Year | 1998 |
| Description | Author affiliation: Div. of Life Scis., Oak Ridge Nat. Lab., TN, USA (Ding, W.X.) |
| Abstract | Summary form only given. Large number densities of radicals are required in plasma assisted material processing where the formation of radicals is governed by conventional plasma chemical process. Operational pressure in plasma reactors has been greatly reduced to 10/sup -3/-10/sup -4/ torr to achieve the good control of particles transport toward the substrate. However low operational pressure results in the relatively low deposition rate. Therefore new plasma chemical reactions have to be pursued in order to efficiently produce radicals. We present a new experimental technique to obtain enhanced radical formation by electron attachment to highly excited state of molecules. |
| File Size | 99747 |
| File Format | |
| ISBN | 0780347927 |
| ISSN | 07309244 |
| DOI | 10.1109/PLASMA.1998.677841 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-06-01 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electrons Plasma density Plasma materials processing Plasma confinement Plasma measurements Plasma sources Breakdown voltage Dielectric breakdown Nuclear and plasma sciences Plasma chemistry |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
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