NDLI: Silicon nitride PECVD at low temperature: film properties and plasma analysis

Content Provider	IEEE Xplore Digital Library
Author	Klein, T.M. Chowdhury, A.I. Lamb, H.H. Parsons, G.N.
Copyright Year	1998
Description	Author affiliation: Dept. of Chem. Eng., North Carolina State Univ., Raleigh, NC, USA (Klein, T.M.)
Abstract	Summary form only given. Recently there has been growing interest in the development of materials and processes at low temperatures compatible with transparent plastics for use in more rugged and flexible flat panel displays. Silicon nitride is a commonly used dielectric in thin film transistors (TFTs), the active switching element for each pixel in a display. We used plasma enhanced chemical vapor deposition (PECVD) at temperatures <150/spl deg/C with SiH/sub 4/, N/sub 2/ and He to deposit silicon nitride. Process analysis was done using in-situ mass spectroscopy and optical emission spectroscopy. Nitrogen instead of NH/sub 3/ was used to inhibit hydrogen incorporation which has been found to increase as temperature decreases in PECVD materials. Our films had an atomic hydrogen concentration near 20% at 50/spl deg/C vs. 30% in films deposited with NH/sub 3/. He dilution was used to engineer the distribution of hydrogen to obtain equal amounts bonded to Si and N, a physical property that has been associated with good quality films deposited at high temperatures. We found that increasing N/sub 2/:SiH/sub 4/ flow rate ratio from 50 to 150 resulted in a decrease in N atom incorporation relative to Si atoms in the films from N/Si=1.37 to 1.27. To examine the possibility of an increasing Si incorporation causing an apparent decrease in N atom fraction, we obtained the silane consumption fraction from mass spectrometry as a function of N/sub 2//SiH/sub 4/ flow rate ratio. The silane consumption fraction decreased from 97% at N/sub 2/ /SiH/sub 4/=50 to 93% at N/sub 2//SiH/sub 4/=150, which means increased Si incorporation as N/sub 2/ flow is increased is unlikely. Optical emission was used to observe nitrogen excited states, and detailed correlations between emission intensities, gas phase species distribution, and Si/N ratio in the deposited films will be reported.
File Size	125471
File Format	PDF
ISBN	0780347927
ISSN	07309244
DOI	10.1109/PLASMA.1998.677717
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Semiconductor films Plasma temperature Optical films Atomic measurements Mass spectroscopy Hydrogen Atomic layer deposition Flat panel displays Thin film transistors
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in