NDLI: Activated nitrogens in ECR-plasma and its effects on growth of cubic GaN

Content Provider	IEEE Xplore Digital Library
Author	Biao Gu Yin Xu Fuwen Qin
Copyright Year	1998
Description	Author affiliation: Dept. of Electromagn. Eng., Dalian Univ. of Technol., China (Biao Gu)
Abstract	Summary form only given. Recently, the market for short wavelength laser diodes attracts many groups to focus on growing the GaN system material. However growing of GaN on GaAs substrates and processing of the devices concerned have to be carried out under the low temperature conditions of less than 800/spl deg/ C. So it's necessary to provide a highly activated nitrogen source for PA-MOCVD. By use of a homemade cavity-coupling ECR plasma generator-MEP to deliver activated nitrogens, excellent cubic GaN epilayers have been grown on [001]GaAs under low temperature(/spl sim/600 degree) and low pressure (/spl sim/1 Pa) by ECR-PAMOCVD. The experiment results showed that the initial nitridation of GaAs substrates and the growth of buffer layer are very important for the combination of the interface and the crystal quality of GaN. So one of the most important growth parameters is the chemical species in the nitrogen plasma,especially nitrogen radicals. The optical emission spectra of nitrogen plasma in MEP were investigated as functions of the operating pressure Po (or N/sub 2/ gas flow rate) and microwave power Pw. It was found that the quantity of nitrogen radicals were increased with Po and Pw, and the MEP plasma generator was a good candidate for growing cubic GaN.
File Size	100827
File Format	PDF
ISBN	0780347927
ISSN	07309244
DOI	10.1109/PLASMA.1998.677652
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nitrogen Gallium nitride Gallium arsenide Plasma temperature Plasma chemistry Diode lasers Optical materials Plasma devices Plasma materials processing Plasma sources
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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