NDLI: Study of a-SiC:H buffer layer on nc-Si/a-Si:H solar cells deposited by PECVD technique

Content Provider	IEEE Xplore Digital Library
Author	Raniero, L. Ferreira, I. Aguas, H. Zhang, S. Fortunato, E. Martins, R.
Copyright Year	2005
Description	Author affiliation: Faculdade de Ciencias e Tecnologia, Univ. Nova de Lisboa, Caparica, Portugal (Raniero, L.; Ferreira, I.; Aguas, H.; Zhang, S.; Fortunato, E.; Martins, R.)
Abstract	This work deals with the study of the role of the buffer layers thickness on the TCO/p-a-SiC:H/buffer/sub 1//buffer/sub 2//i-(nc-Si/a-Si:H)/n-a-Si:H/AI solar cell I-V and impedance performances. The aim was to improve the p/i interface region, which has a large influence on the solar cell characteristics and stability. In order to match the difference between the p and i layers optical gaps, the buffer layers were deposited using, for each layer, different methane to silane mixtures, aiming to obtain a gradual match of the corresponding optical gaps. The intrinsic layer was deposited at high hydrogen dilution rates at 27.12 MHz in conditions that allowed the incorporation of nanoparticles/nanoclusters. Solar cells with fill factor of 0.63; open circuit voltage of 0.93 Volts; short circuit current density of 16.13 mA/cm/sup 2/ and an efficiency of 9.4% were produced with buffer layers around 1.3 nm thick. When comparing these solar cells with conventional amorphous silicon solar cells we notice that the quantum efficiency from ultraviolet to green regions is improved up to 13%, in average. Concerning solar cell capacitance, the data show that the best solar cells exhibit the highest capacitance, meaning that the films are compact and dense, in-line with the other electrical characteristics obtained.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	1548
Ending Page	1551
File Size	728926
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488439
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Buffer layers Photovoltaic cells Optical buffering Optical films Quantum capacitance Artificial intelligence Impedance Stability Hydrogen Nanoparticles
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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