NDLI: Non-uniformity mitigation in CdTe solar cells: the effects of high-resistance transparent conducting oxide buffer layers

Content Provider	IEEE Xplore Digital Library
Author	Feldman, S.D. Mansfield, L. Ohno, T.R. Kaydanov, V. Beach, J.D. Nagle, T.
Copyright Year	2005
Description	Author affiliation: Dept. of Phys., Colorado Sch. of Mines, USA (Feldman, S.D.; Mansfield, L.; Ohno, T.R.; Kaydanov, V.; Beach, J.D.)
Abstract	High-resistance transparent conducting oxide buffer layers (HRTs) are commonly added between the doped transparent conducting oxide (TCO) and CdS in both CdTe and Cu(In,Ga)Se/sub 2/ (CIGS) based solar cells. The addition of the HRT is known to increase efficiency and has been employed in the production of record CdTe and CIGS devices. Here, we directly and unambiguously observe the non-uniformity mitigation effects of the HRT in CdTe cells through spatially resolved electroluminescence and light-beam induced current measurements. This decrease in non-uniformity has been measured in CdTe cells prepared both at the National Renewable Energy Laboratory and at the Colorado School of Mines both with and without HRT layers. Our measurements suggest that the nonuniformity is caused by thin CdS regions.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	271
Ending Page	274
File Size	865206
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488121
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Buffer layers Production Energy resolution Spatial resolution Electroluminescence Current measurement Energy measurement Renewable energy resources Laboratories
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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