NDLI: Analysis of flight demonstration results of an InGaP/GaAs dual-junction tandem solar cell

Content Provider	IEEE Xplore Digital Library
Author	Imaizumi, M. Sumita, T. Kawakita, S. Ohshima, T. Ito, H. Kuwajima, S.
Copyright Year	2005
Description	Author affiliation: Japan Aerosp. Exploration Agency, Ibaraki, Japan (Imaizumi, M.; Sumita, T.; Kawakita, S.)
Abstract	The radiation degradation trend of an InGaP/GaAs dual-junction solar cell was studied to validate solar cell degradation-prediction methodologies. Ground irradiation test results and data from a space demonstration test performed in GTO for 600 days were compared. Equivalent fluences of 1 MeV electrons and 10 MeV protons for I/sub SC/, V/sub OC/ and P/sub max/ were obtained from the remaining factor at the end of the mission. The equivalent fluence of 10 MeV protons for the three output factors agreed better than that of 1 MeV electrons due to the proton-rich radiation environment in orbit. The degradation trends of the dual-junction cell were compared with that of single-junction sub-cells using displacement damage dose. The degradation of the dual-junction cell can be explained by the sub-cell degradation and operation principle of the dual-junction cell. However, the flight cell was found to exhibit faster degradation than expected from the ground test results.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	563
Ending Page	566
File Size	677720
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488193
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Photovoltaic cells Degradation Testing Electrons Protons Current measurement Atomic measurements Satellites Voltage
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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