NDLI: Aluminum induced rapid crystallization of amorphous silicon films in an electric field at low temperature

Content Provider	IEEE Xplore Digital Library
Author	Kuixun Lin Xuanying Lin Yikuang Chen Yunpun Yu Yilin Luo Rui Huang
Copyright Year	2005
Description	Author affiliation: Dept. of Phys., Shantou Univ., China (Kuixun Lin; Xuanying Lin; Yikuang Chen; Yunpun Yu; Yilin Luo; Rui Huang)
Abstract	The a-Si films were deposited on Al-coated 7059 glass substrates by plasma enhanced chemical vapor deposition, and the formed a-Si/AI/glass structure samples were thermally annealed at a temperature range of 400-550 /spl deg/C for duration time of 5-60 min in absence and presence of an electric field, respectively. The annealed samples were characterized by X-ray diffraction spectra and Raman scattering spectroscopy. The a-Si film of 1.2 /spl mu/m, annealed at 400 /spl deg/C for 60 minutes, completely transforms into poly-Si film in the presence of an electric field of 30 V/cm, while only 15% volume fraction of a-Si film crystallize into poly-Si at the same annealing conditions but in absence of electric field. When the intensity of the electric field increases to 120 V/cm, all of a-Si film transform completely into poly-Si at 450 for only 30 min. The enhancing effect of the biased electric field on the Al induced solid phase crystallization of a-Si is apparent, and the mechanism of this effect is discussed briefly.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	1520
Ending Page	1523
File Size	634390
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488432
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum Crystallization Amorphous silicon Semiconductor films Plasma temperature Annealing Glass Raman scattering Spectroscopy Substrates
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in