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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Repmann, T. Kilper, T. Appenzeller, W. Zahren, C. Stiebig, H. Rech, B. |
| Copyright Year | 2005 |
| Description | Author affiliation: Inst. of Photovoltaics, Forschungszentrum Julich GmbH, Germany (Repmann, T.; Kilper, T.; Appenzeller, W.; Zahren, C.; Stiebig, H.; Rech, B.) |
| Abstract | This paper reviews the status of the process development and up-scaling of thin-film solar cells and modules based on amorphous (a-Si:H) and microcrystalline (/spl mu/c-Si:H) silicon at the Institute of Photovoltaics (IPV) on substrate areas up to 30/spl times/30 cm/sup 2/. Initial efficiencies of 10.6% and 10.7% were achieved for a-Si:H//spl mu/c-Si:H modules on 30/spl times/30 cm/sup 2/ and 10/spl times/10 cm/sup 2/ substrates, respectively. The latter ones yielded a stabilized efficiency of 10.1% which was independently confirmed by NREL. We address the process development for /spl mu/c-Si:H solar cells in a high pressure regime using plasma excitation frequencies of 13.56 and 40.68 MHz. High deposition rates up to 15 /spl Aring//s could be achieved by applying high discharge powers at 40.68 MHz. We discuss technological aspects related to the up-scaling of the PECVD processes to areas of 1 m/sup 2/ and above which is the topic of a recently started German R&D project of Applied Films GmbH & Co. KG (AF), Forschungsund Applikationslabor Plasmatechnik GmbH (FAP) and the IPV. |
| Sponsorship | IEEE Electron Devices Soc. (USA) |
| Starting Page | 1383 |
| Ending Page | 1388 |
| File Size | 1193756 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780387074 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2005.1488398 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-01-03 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Semiconductor thin films Photovoltaic cells Amorphous materials Silicon Substrates Frequency Glass Electrodes Plasma measurements Plasma temperature |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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