NDLI: Analysis of depletion-region collection in GaInNAs solar cells

Content Provider	IEEE Xplore Digital Library
Author	Friedman, D.J. Ptak, A.J. Kurtz, S.R. Geisz, J.F.
Copyright Year	2005
Description	Author affiliation: Nat. Renewable Energy Lab., Golden, CO, USA (Friedman, D.J.; Ptak, A.J.; Kurtz, S.R.; Geisz, J.F.)
Abstract	We provide qualitative insight into depletion-region collection in GaInNAs cells to (1) understand the effect of diffusion length L on the QE; and (2) describe the magnitude of L required to get adequate current from the cell. We use Wolf's equations for the QE including a drift field E, and model E as being equal to the junction built-in voltage distributed uniformly across the depletion region. This allows us to calculate the QE as a function of L and depletion width W/sub D/. We show that if L is sufficiently small, increasing W/sub D/ can actually decrease the QE. To determine how long L needs to be in a practical GaInNAs junction, we calculate from the QE the short-circuit current density as a function of W/sub D/ and L. This allows us to estimate that L/sub ambipolar/ needs to be greater than roughly 1 /spl mu/m in order to obtain enough photocurrent for the 4-junction application, giving guidance to the experimental effort to develop such cells.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	691
Ending Page	694
File Size	716004
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488225
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Renewable energy resources Laboratories Equations Voltage Current density Photoconductivity Solid modeling Epitaxial growth Epitaxial layers
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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