NDLI: External rf substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma

Content Provider	IEEE Xplore Digital Library
Author	Smets, A.H.M. Petit, A.M.H.N. Nadazdy, V. Kessels, W.M.M. van Swaaij, R.A.C.M.M. van de Sanden, M.C.M.
Copyright Year	2005
Description	Author affiliation: Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands (Smets, A.H.M.)
Abstract	An external rf substrate bias (ERFSB) has been employed during the deposition of hydrogenated amorphous silicon (a-Si:H) by means of the expanding thermal plasma (ETP) deposition technique. The effects of the additional created ion bombardment on the a-Si:H material properties, such as the microstructure and defects, have been studied. The incorporation of nano-sized voids is reduced under ERFSB whereas the incorporation of vacancies is enhanced. The mass density increases with increasing rf power (P/sub rf/). For moderate ERFSB (P/sub rf/>12 W) the sub gap absorption of the a-Si:H material is reduced drastically. Possible plasma and ion bombardment induced surface processes responsible for these observations are discussed. Finally, it is demonstrated that the performance of the pin cells with a-Si:H films deposited with ERFSB improves.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	1389
Ending Page	1392
File Size	692709
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488399
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Material properties Amorphous silicon Thermal expansion Plasma properties Plasma materials processing Substrates Hydrogen Plasma temperature Plasma density
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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