NDLI: High efficiency amorphous silicon germanium solar cells

Content Provider	IEEE Xplore Digital Library
Author	Liao, X. Du, W. Yang, X. Povolny, H. Xiang, X. Deng, X.
Copyright Year	2005
Description	Author affiliation: Dept. of Phys. & Astron., Toledo Univ., OH, USA (Liao, X.; Du, W.; Yang, X.; Povolny, H.; Xiang, X.; Deng, X.)
Abstract	We report high-efficiency single-junction a-SiGe n-i-p solar cells deposited using rf PECVD on stainless steel (SS) substrates coated with metal/ZnO back-reflector (BR). The initial and stabilized active-area efficiencies have been improved to 12.5-13.0% and 10.4%, respectively, for 0.25 cm/sup 2/ a-SiGe cells. The achievement of single-junction cells with such high efficiencies, equivalent to those for the state-of-the-art triple-junction solar cells, are important since this would lead to significant cost reduction in manufacturing. The key factors leading to these high efficiencies include the use of: 1) an optimized GeH/sub 4/ to Si/sub 2/H/sub 6/ ratio leading to a Ge content ideal for high-efficiency single-junction a-SiGe cell, 2) an optimized level of hydrogen dilution for the i-layer, and, most importantly, 3) a hybrid p-layer with the sub-layer near a-SiGe i-layer deposited at high temperature (140 /spl deg/C) and the bulk of the p-layer deposited at low temperature (70 /spl deg/C) for better transparency.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	1444
Ending Page	1447
File Size	498304
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488413
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous silicon Photovoltaic cells Photonic band gap Hydrogen Temperature Lamps Steel Germanium alloys Physics Astronomy
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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