NDLI: Study of deep electronic states in CdTe solar cells through the detection and DLTS treatment of slow transients

Content Provider	IEEE Xplore Digital Library
Author	Seymour, F.H. Kaydanov, V. Ohno, T.R.
Copyright Year	2005
Description	Author affiliation: Colorado Sch. of Mines, Golden, CO, USA (Seymour, F.H.; Kaydanov, V.; Ohno, T.R.)
Abstract	We have designed and built a temperature controlled sample stage with automated data acquisition software to detect and study thin film solar cell deep electronic states (DES) with capacitance transients (CTr) that have characteristic times ranging from seconds to hours. Our studies on thin film CdTe solar cells regularly detect DES with concentrations exceeding the doping level and with characteristic times in the tens to hundreds of seconds at room temperature. An example is given of how this high concentration of DES with slow characteristic times can provide misleading C-V profile measurements. Also described are preliminary observations of Meyer-Neldel rule behavior and DLTS analysis of CdTe cells with and without copper and CdCl/sub 2/ treatment.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	275
Ending Page	278
File Size	709526
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488122
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Transistors Temperature distribution Automatic control Temperature control Data acquisition Capacitance Doping Capacitance-voltage characteristics Copper
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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