NDLI: Growth and properties of nanocrystalline germanium and germanium-carbide films and devices

Content Provider	IEEE Xplore Digital Library
Author	Xuejun Niu Booher, J. Dalal, V.L.
Copyright Year	2005
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA (Xuejun Niu; Booher, J.; Dalal, V.L.)
Abstract	Nanocrystalline Ge:H and (Ge,C):H are potentially important materials for photovoltaic energy conversion. In this paper, we report on the growth of these materials using remote ECR plasma deposition techniques. The materials were grown using a high degree of hydrogen to germane dilution. The as-grown materials had predominantly <220> orientation. Grain size was found to depend critically upon hydrogen dilution, with low hydrogen dilutions yielding larger grains. Hall measurements showed electron mobility to be as large as 6 cm/sup 2//V-sec. p-n junction devices were made in the material and showed photovoltaic effect. The quantum efficiency extended out to 0.8 eV. Addition of C to Ge reduced the crystallinity.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	1508
Ending Page	1511
File Size	538940
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488429
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nanoscale devices Germanium Hydrogen Plasma measurements Photovoltaic systems Solar power generation Energy conversion Plasma properties Plasma devices Plasma materials processing
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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