NDLI: Evolution of defect complexes in InGaAsN

Content Provider	IEEE Xplore Digital Library
Author	Aurangzeb Khan Kurtz, S.R. Prasad, S. Johnston, S.W.
Copyright Year	2005
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of South Alabama, Mobile, AL, USA (Aurangzeb Khan)
Abstract	The thermal annealing of nitrogen related traps in p-type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (E/sub C/-0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (/spl sim/8.9 /spl times/ 10/sup -15/ cm/sup 2/) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency (IQE) data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.
Sponsorship	IEEE Electron Devices Soc. (USA)
Starting Page	731
Ending Page	734
File Size	717998
Page Count	4
File Format	PDF
ISBN	0780387074
ISSN	01608371
DOI	10.1109/PVSC.2005.1488236
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-01-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Photovoltaic cells Nitrogen Spectroscopy Photovoltaic systems Solar power generation Diodes Radioactive decay Radiative recombination Spontaneous emission
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in