NDLI: Characterization of laser-induced photoexcitation effect on a surrounding CMOS ring oscillator

Content Provider	IEEE Xplore Digital Library
Author	Wild, G. Savaria, Y. Meunier, M.
Copyright Year	2005
Description	Author affiliation: Dept. of Electr. Eng., Ecole Polytech. de Montreal, Que., Canada (Wild, G.; Savaria, Y.)
Abstract	The use of laser trimming techniques with conventional CMOS processes requires thorough understanding of the electrical consequences of a laser pulse on surrounding sensitive devices. A study on the laser-induced photoexcitation effect on a ring-oscillator has been performed. Experiments are performed with a laser beam focused on a diffusible resistor made of a n-doped gap between two highly p-doped regions. An in-situ characterization technique has been used to get the laser's power profile under dielectric layers. A novel frequency-monitoring circuit is presented. It has been manufactured in 0.18 /spl mu/m CMOS technology and experimental results are presented. It has been measured that the laser causes a 28% change of the oscillating frequency. An approach to model the photoexcitation effect using combined electrical and physical simulations is presented.
Starting Page	3696
Ending Page	3699
File Size	327103
Page Count	4
File Format	PDF
ISBN	0780388348
DOI	10.1109/ISCAS.2005.1465432
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-05-23
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ring lasers Ring oscillators Laser modes Frequency CMOS technology CMOS process Optical pulses Laser beams Resistors Power lasers
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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