NDLI: On the lateral excitation of shear modes in AlN layered resonators

Content Provider	IEEE Xplore Digital Library
Author	Clement, M. Iborra, E. Olivares, J. de Miguel-Ramos, M. Capilla, J. Sangrador, J.
Copyright Year	2012
Description	Author affiliation: GMME.-CEMDATIC. ETSI Telecomun., Univ. Politec. de Madrid, Madrid, Spain (Clement, M.; Iborra, E.; Olivares, J.; de Miguel-Ramos, M.; Capilla, J.; Sangrador, J.)
Abstract	In this paper we describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films, which are at the same time designed to minimize the excitation of longitudinal modes. Laterally excited resonators were built on partially metallic $(SiO_{2},$ W) and insulating (SiOC, $Si_{3}N_{4})$ acoustic mirrors built on silicon substrates, and on insulating mirrors $(SiO_{2},$ $TaO_{x})$ built on insulating glass plates. $TiO_{x}$ seed layers were used to stimulate the growth of highly c-axis oriented AlN films, which was confirmed by XRD and SAW measurements. Coplanar Mo electrodes of different geometries were defined on top of the AlN films to excite the shear modes. All the structures analyzed displayed a clear longitudinal mode, corresponding to an acoustic velocity of 11000 m/s, but a null or extremely weak shear response corresponding to a sound velocity of around 6350 m/s. The simulation of the frequency response based on Mason's model confirms that the shear resonance is extremely weak. The observed longitudinal modes are attributed either to the field applied between the electrodes and a conductive plane (metallic layer or Si substrate) or to the electric field parallel to the c-axis in the edges of the electrodes or in tilted grains. The low excitation of shear modes is attributed to the very low values of electric field strength parallel to the surface.
Starting Page	1
Ending Page	4
File Size	295153
Page Count	4
File Format	PDF
ISBN	9781467345613
ISSN	19485719
e-ISBN	9781467345620
DOI	10.1109/ULTSYM.2012.0133
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-07
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	III-V semiconductor materials Films Substrates Acoustics Electrodes Electric fields Frequency response
Content Type	Text
Resource Type	Article

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