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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ming-Chih Chen Hsieh, F. Dyi-Chung Hu |
| Copyright Year | 2012 |
| Description | Author affiliation: Technology Center, Unimicron Technology, Inc., No.290, Chung-Lun Village, Hsin-Feng, Hinchu, (304) Taiwan (Ming-Chih Chen; Hsieh, F.; Dyi-Chung Hu) |
| Abstract | Existing popular temporary bonding techniques for TSV thin wafer handling can be classified into three categories: (1) Carrier with via hole structure, for example: solution provided by TOK (zero Newton) process (2) Adhesion Layer separation type, for example: solution provided by 3M (WSS) process (3) High temperatures debonding process, solution for example: provided by Brewer Science (HT) process. Each type has its own challenges; for example: The carrier used in type 1 is easy to crack; the adhesive layer in type 2 may leave residues after high temperature process, and type (3) process need high temperature for de-bonding. Beside these issues, the investments in equipment and materials cost millions of dollars thus prevent wide application for TSV. Hence, it is desirable to have a low cost solution for the thin wafer carrier process. |
| Starting Page | 561 |
| Ending Page | 563 |
| File Size | 459192 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467319669 |
| ISSN | 05695503 |
| e-ISBN | 9781467319652 |
| e-ISBN | 9781467319645 |
| DOI | 10.1109/ECTC.2012.6248885 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-05-29 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Solvents Through-silicon vias Adhesives Charge carrier processes Materials |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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