NDLI: Methodology for avoidance of ratcheting-induced stable cracking (RISC) in microelectronic devices

Content Provider	IEEE Xplore Digital Library
Author	Zhen Zhang Zhigang Suo Yong Liu Irving, S. Timwah Luk Desbiens, D.
Copyright Year	2006
Description	Author affiliation: Div. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA (Zhen Zhang; Zhigang Suo)
Abstract	A typical microelectronic device contains a silicon die in a package encapsulated with an epoxy. This polymer and various inorganic materials on the die, such as metal interconnects and ceramic passivation films, have dissimilar coefficients of thermal expansion (CTEs). When such a device is subject to a change in temperature, the mismatch in the CTEs deforms the materials. In particular, as temperature cycles, the plastic deformation in a metal interconnect may accumulate incrementally, a phenomenon known as ratcheting plastic deformation. Ratcheting in the metal film may induce large stresses in an overlaying ceramic film, causing cracks to initiate and grow stably cycle by cycle. In this paper, such ratcheting-induced stable cracking (RISC) is studied using a simplified three-layer model. We describe conditions under which ratcheting will occur in the metal layer, predict the number of cycles for the crack to initiate in the ceramic film, and discuss strategies to avoid RISC in design
File Size	562015
File Format	PDF
ISBN	1424401526
ISSN	05695503
DOI	10.1109/ECTC.2006.1645844
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Reduced instruction set computing Microelectronics Ceramics Polymer films Temperature Plastics Silicon Packaging Inorganic materials Passivation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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