NDLI: A novel method for bonding of ionic wafers

Content Provider	IEEE Xplore Digital Library
Author	Howlader, M.R. Suga, T. Kim, M.J. Itoh, N. Deen, J. Mascher, P.
Copyright Year	2006
Description	Author affiliation: McMaster Univ., Hamilton, Ont. (Howlader, M.R.)
Abstract	A novel method for bonding sapphire, $LiNbO_{3},$ quartz and glass wafers with silicon using the modified surface activated bonding (SAB) method is described. In this method, the mating surfaces were cleaned and nano-adhesion Fe layers were deposited using a low energy argon ion beam simultaneously. The optical images show that the entire area of 4-inch wafers of $LiNbO_{3}/Si$ was bonded. Such images for other samples show particle induced voids across the interface. The average tensile strength for all of the mating pairs was much higher than 10 MPa. Prolonged irradiation reduces polarization in LiNbO3 , sapphire, quartz and Al-silicate glasses. Fe and Ar ions induced charge deposition may have resulted in electric field, which was responsible for the depolarization. The lattice mismatch induced local strain was found in $LiNbO_{3}/Si.$ No such strain was observed in the Al-silicate glass/Si interface probably because of annealing at 573 K for 8 h. The Al-silicate glass/Si interface showed a layer of 2-nm thick. An amorphous layer of 5-nm thick was observed with a layer across the $LiNbO_{3}/Si$ interface. The EELS spectra confirmed the presence of nano-adhesion Fe layers across the interface. These Fe layers associated with the electric filed induced by ion beam irradiation for prolonged period of time, particularly in Si/LiNbO3 , might be responsible for the high bonding strength between Si/ionic wafers at low temperature
File Size	2802196
File Format	PDF
ISBN	1424401526
ISSN	05695503
DOI	10.1109/ECTC.2006.1645703
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wafer bonding Glass Iron Argon Ion beams Capacitive sensors Silicon Particle beam optics Polarization Lattices
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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