NDLI: Thermal and electrical characterization and modeling of thin copper layers

Content Provider	IEEE Xplore Digital Library
Author	Wenjun Liu Yizhang Yang Asheghi, M.
Copyright Year	2006
Description	Author affiliation: Dept. of Aerosp. & Mech. Eng., Notre Dame Univ., IN (Wenjun Liu)
Abstract	This paper presents the experimental and theoretical study on the effects of electron scattering at grain and boundaries on the reduction of effective thermal conductivity. The present study measures the electrical resistivity and lateral thermal conductivity of thin copper layers of thicknesses 50 and 144 nm at temperatures between 40 and 400 K, using Joule heating and electrical-resistance thermometry in suspended micro fabricated structures. A fitting model including the size effect and grain boundary scattering is used to model the thermal conductivity and electrical resistivity of thin copper film simultaneously and is consistent with the experimental results. The thermal conductivity of the 50 nm thick copper layer is ~150 W m-1$K^{-1},$ which is much smaller than the bulk value (~400 W $m^{-1}$ $K^{-1})$ at room temperature. The experimental and modeling data are essential to address performance and reliability issues for future device and interconnect technologies
Starting Page	1171
Ending Page	1176
File Size	534784
Page Count	6
File Format	PDF
ISBN	0780395247
ISSN	10879870
DOI	10.1109/ITHERM.2006.1645477
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Thermal conductivity Scattering Electric resistance Thermal resistance Temperature Electrons Conductivity measurement Electric variables measurement Thickness measurement
Content Type	Text
Resource Type	Article

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