NDLI: Accelerated Active High-Temperature Cycling Test for Power MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Schacht, R. Wunderle, B. Auerswald, E. Michel, B. Reichl, H.
Copyright Year	2006
Description	Author affiliation: Fraunhofer Inst. Zuverlassigkeit und Mikrointegration, Berlin (Schacht, R.; Wunderle, B.)
Abstract	In this paper reliability test equipment is presented that allows accelerated failure tests of packaged power MOSFETs (e.g. TO220, TO263). The failure criterion used is an increase in thermal impedance which is observed in-situ during testing. The duration of the cycles depends on the shift of the junction temperature $T_{J}:$ Testing with a temperature shift of $T_{J,min}=$ 70 degC to $T_{J,max}=$ 170 degC takes for 12 devices and 1 million cycles about 18 days. Thermo-mechanical finite element simulations and failure analysis accompany and support the experimental results. The paper gives an overview over the set-up and the measurement technique and discusses the outcome of simulation and test
Starting Page	1102
Ending Page	1110
File Size	730505
Page Count	9
File Format	PDF
ISBN	0780395247
ISSN	10879870
DOI	10.1109/ITHERM.2006.1645468
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Life estimation Testing MOSFETs Temperature dependence Test equipment Packaging machines Impedance Thermomechanical processes Finite element methods Analytical models
Content Type	Text
Resource Type	Article

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