NDLI: Influence of Bias-enhanced nucleation on thermal conductance through plasma-enchanced chemical vapor deposited diamond films

Content Provider	IEEE Xplore Digital Library
Author	Cola, B.A. Karru, R. Changrui Cheng Xianfan Xu Fisher, T.S.
Copyright Year	2006
Description	Author affiliation: Purdue Univ. Sch. of Mech. Eng., West Lafayette, IN (Cola, B.A.)
Abstract	This work describes an experimental study of the cross-plane thermal conductance of plasma-enhanced chemical vapor deposited (PECVD) diamond films grown as a result of bias-enhanced nucleation (BEN). The diamond films are grown on silicon wafers using a two-step process in which a nucleation layer of amorphous or diamond like (DLC) carbon is first deposited on the silicon under the influence of a voltage bias. Then, conditions are adjusted to allow for polycrystalline diamond (PD) growth. The nucleation layer is essential for seeding diamond growth with minimal substrate destruction and for optimizing PD properties such as grain size, orientation, transparency, adhesion, and roughness. The effective thermal conductivity of the nucleation layer and the total film are separately measured using a photoacoustic technique. The effective thermal conductivity of the nucleation layer exhibits a thickness dependence for relatively thin layers. A resistive network for the total film is developed. The influence of nucleation layers that are 65, 240, 400, and 650 nm thick on the thermal conductance of the total film is characterized. The minimum total film resistance occurs when the nucleation layer is thinnest. When the nucleation layer is sufficiently thick, it begins to exhibit bulk behavior, and the boundary resistance at the nucleation/PD boundary dominates the total film resistive network
Starting Page	512
Ending Page	518
File Size	454856
Page Count	7
File Format	PDF
ISBN	0780395247
ISSN	10879870
DOI	10.1109/ITHERM.2006.1645387
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal conductivity Plasma chemistry Chemicals Conductive films Silicon Semiconductor films Amorphous materials Diamond-like carbon Voltage Substrates
Content Type	Text
Resource Type	Article

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