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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jing Wan Shao-Ren Deng Yifang Chen Huq, E. Ran Liu Xin-Ping Qu |
| Copyright Year | 2009 |
| Description | Author affiliation: State key lab of ASIC and systems, Department of microelectronics, Fudan university, Shanghai 200433, China (Jing Wan; Shao-Ren Deng; Ran Liu; Xin-Ping Qu) || Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OX11 0QX, UK (Yifang Chen; Huq, E.) |
| Abstract | In this work, we demonstrate a novel SU8/SiO /PMMA trilayer nanoimprint technique to fabricate the silicon nanowire (SiNW) sensor used for gas detection. The SiNW sensor fabricated in our experiment is based on the silicon on insulator (SOI) substrate which is doped by boron with a dopant concentration of $8×10^{17}cm^{−3}.$ Two nanowire sensors with different linewidths as well as a thin-film plane device were fabricated for comparison. The fabricated devices were then used for detecting 250ppm NO and 250ppm NH. The results show a large enhanced sensitivity especially for the narrower device. Finally, a computer simulation work was done to qualitatively explain our experimental results. |
| Starting Page | 1013 |
| Ending Page | 1016 |
| File Size | 5701238 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424446292 |
| DOI | 10.1109/NEMS.2009.5068745 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-01-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Fabrication Silicon Gas detectors Substrates Nanobioscience Surface resistance Nickel Sensor systems Lithography Electron beams gas detection SU8 nanoimprint silicon nanowire sensor |
| Content Type | Text |
| Resource Type | Article |
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