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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhuangde Jiang Fengxia Zhao Weixuan Jing Prewett, P.D. Jiang, K. |
| Copyright Year | 2009 |
| Description | Author affiliation: State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Shaanxi, China (Zhuangde Jiang; Fengxia Zhao; Weixuan Jing) || School of Mechanical Engineering, University of Birmingham, Edgbaston, UK (Prewett, P.D.; Jiang, K.) |
| Abstract | Two kinds of nano-scale typical structures were fabricated for characterizing line edge roughness(LER) and line width roughness(LWR). With Cr and Si3N4 thin films alternately deposited on a silicon substrate and electronic beam lithography employed on a positive resist ZEP520 layer, a nano-scale multiple linewidth standard and a nano-scale grating structure were processed respectively. In regard to the nano-scale multiple linewidth standards, an offline image analysis algorithm of Scanning Electron Microscopy (SEM) image and a random error analysis method were employed to characterize its LER and LWR, including standard deviations 3 σ and 3 σ. With respect to the nano-scale grating structure, sampling and evaluation length, amplitude standard deviation, skewness, kurtosis, auto-correlation function as well as power spectral density function of the nano-scale grating structure were analyzed based on stochastic process analysis to show LER characteristics. Similarly Motif parameters-based analysis also was introduced to get LER characteristics of the nano-scale grating structure. |
| Starting Page | 299 |
| Ending Page | 303 |
| File Size | 4022762 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424446292 |
| DOI | 10.1109/NEMS.2009.5068582 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-01-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Nanostructures Gratings Scanning electron microscopy Chromium Semiconductor thin films Sputtering Silicon Lithography Resists Image edge detection Scanning Electron Microscopy Characterization Fabrication Line Edge Roughness Line Width Roughness |
| Content Type | Text |
| Resource Type | Article |
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