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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yan Cui Huilin Chen Jinsong Xia Jiaxin Zhao Jing Wang Liding Wang |
| Copyright Year | 2009 |
| Description | Author affiliation: Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, China (Huilin Chen; Jinsong Xia; Jiaxin Zhao; Liding Wang) || School of Electron and information Engineering, Dalian University of Technology, China (Jing Wang) || Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, China (Yan Cui) |
| Abstract | Pb (Zr) O (PSZT) thin films have been fabricated on Pt/Ti/SiO/Si substrates by a sol-gel method combined with a rapid thermal annealing process. It is shown that the introduction of $Sr^{2+}$ into the PZT thin films favors the growth of (111) orientation. The orientation ratio of (111) is increased from 0.304, 0.475 to 0.849 with the increase of the x value. The dielectric measurement results indicates that the addition of $Sr^{2+}$ in the PZT thin films greatly improves the dielectric properties of the PZT thin films. Two kinds of the PSZT0.03 thin films with thickness of 1.68um and 2.19um were fabricated and tested for the same structure size, and the spring constant of 11.72N/m and 4.87N/m is obtained, respectively. The PSZT thin films with x=0, 0.03, 0.08 have an spring constant of 13.73N/m, 11.72N/m and 8.16N/m, respectively. Three kinds of the PSZT thin films for the microforce sensors were tested in quasi static state, the sensing sensitivity of the three kinds of microforce sensors are 0.017pc/uN, 0.033pc/uN, and 0.011pc/uN, respectively. The sensing sensitivity of the microforce sensors is 0.033pc/uN and 0.077pc/uN while thickness of PSZT0.03 thin films is 1.68um and 2.19um. |
| Starting Page | 286 |
| Ending Page | 290 |
| File Size | 2999622 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424446292 |
| DOI | 10.1109/NEMS.2009.5068579 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-01-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thin film sensors Dielectric thin films Strontium Testing Springs Zirconium Semiconductor thin films Rapid thermal processing Rapid thermal annealing Dielectric measurements PZT thin films Dielectric losses Force Microsesnsors |
| Content Type | Text |
| Resource Type | Article |
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