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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ding, J.N. Qi, H.S. Yuan, N.Y. He, Y.L. Cheng, G.G. |
| Copyright Year | 2009 |
| Description | Author affiliation: Center of Micro and Nano Science and Technology, Jiangsu University, Zhenjiang, China (Qi, H.S.; Cheng, G.G.) || Jiangsu Polytechnic University, Changzhou 213016, China (Ding, J.N.; Yuan, N.Y.; He, Y.L.) |
| Abstract | This work presents the influence of post-annealing on mechanical and electrical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited on Corning 7059 glass and Si substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The basic mechanical properties of the films are measured by means of nanoindentation system. Using a four point resistivity test system, electrical properties of the films are characterized. It is found that, the value of elastic modulus and hardness of the films become larger after annealing. For those deposited by higher radio frequency (RF), the mechanical properties are enhanced notably. Annealing also affects the resistivity of films. With annealing temperature increasing, the resistivity of films decrease sharply. When annealing temperature up to 450°C, the resistivity of films become stable. Thin films still have a good quality at 500°C of annealing temperature and have a lowest resistivity. |
| Starting Page | 413 |
| Ending Page | 415 |
| File Size | 971805 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424446292 |
| DOI | 10.1109/NEMS.2009.5068607 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-01-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Mechanical factors Silicon Semiconductor thin films Conductivity Annealing Plasma temperature Plasma properties Plasma measurements Radio frequency Sputtering resistivity annealing elastic modulus nc-Si:H films |
| Content Type | Text |
| Resource Type | Article |
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