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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bian Tian Yulong Zhao Zhuangde Jiang Ling Zhang Nansheng Liao Yuanhao Liu Chao Meng |
| Copyright Year | 2009 |
| Description | Author affiliation: State Key Laboratory for Mechanical Manufacturing System, Institute of Precision Engineering, Xi'an, Jiaotong University, 710049, China (Bian Tian; Yulong Zhao; Zhuangde Jiang; Ling Zhang; Nansheng Liao; Yuanhao Liu; Chao Meng) |
| Abstract | A kind of micro piezoresistive pressure sensor with stable performances under high temperature is designed based on the silicon on insulator (SOI). Through analyzing the stress distribution of diaphragm by finite element method (FEM), the model of structure was established. The fabrication operated on SOI wafer, which can be used in extreme high temperature environments, and applied the technology of anisotropy chemical etching. Performances of this kind of SOI piezoresistive sensor, including size, sensitivity, and temperature were investigated. The result shows that the precision is 0.57%FS. Therefore, this kind of design not only has smaller size, simplicity preparation but also has high sensitivity, temperature coefficient and accuracy. |
| Starting Page | 55 |
| Ending Page | 58 |
| File Size | 3905945 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424446292 |
| DOI | 10.1109/NEMS.2009.5068526 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-01-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon on insulator technology Temperature sensors Piezoresistance Chemical technology Stress Finite element methods Semiconductor device modeling Fabrication Anisotropic magnetoresistance Etching High temperature SOI Pressure FEM |
| Content Type | Text |
| Resource Type | Article |
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