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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xuejiao Fan Dacheng Zhang |
| Copyright Year | 2009 |
| Description | Author affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China (Xuejiao Fan; Dacheng Zhang) |
| Abstract | The approach to realize the electrical interconnect and qualities of the contact have a direct impact on the performance and reliability of devices. Herein, Si-Au/Pt/Ti contact structure is fabricated using anodic bonding as a novel approach to realize the electrical interconnect. In order to evaluate the qualities of the anodic bonded contact, the contact resistance is extracted. The cross-bridge Kelvin method is optimized and a new method is presented to directly measure the contact resistance, named four-terminals bonded vertical Kelvin method (BVD). The two-dimensional resistor network model of the BVD method indicates that the relationship between the contact resistance and the measured resistance can be easily established. The BVD method can directly and precisely measure the contact resistance since kinds of interferences from parasitic resistances are minimized. Data obtained from the test indicate that the anodic bonded contact is Ohmic contact when the area of the contact is larger than $15*20μm^{2}$ with the contact length not smaller than 15μm; whereas, the contact is not Ohmic contact and not stable when the area of the contact is smaller than $15*20μm^{2}.$ The qualities of small-size anodic bonded contact is related with the effects of interfacial states, native oxide layer, series resistances at the interface, and the other particularities such as interfacial inter-diffusion, Au/Si eutectic reaction and surface topology. |
| Starting Page | 198 |
| Ending Page | 201 |
| File Size | 2306815 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424446292 |
| DOI | 10.1109/NEMS.2009.5068558 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-01-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Bonding Micromechanical devices Nanoelectromechanical systems Contact resistance Electrical resistance measurement Kelvin Ohmic contacts Optimization methods Resistors Interference electrical interconnect anodic bonding bonded vertical Kelvin method contact resistance |
| Content Type | Text |
| Resource Type | Article |
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