NDLI: Cu/Sn Isothermal Solidification Technology for Hermetic Packaging of MEMS

Content Provider	IEEE Xplore Digital Library
Author	Li Li Jiwei Jiao Le Luo Yuelin Wang
Copyright Year	2006
Description	Author affiliation: State Key Labs. of Transducer Technol., Chinese Acad. of Sci., Shanghai (Li Li; Jiwei Jiao; Le Luo; Yuelin Wang)
Abstract	This paper introduces a novel wafer-level hermetic packaging technology for MEMS based on Cu/Sn isothermal solidification (IS) technology. We designed the structure of the intermediate multilayer and the pattern of sealing rings, optimized the bonding process, and analyzed some key factors affecting the hermeticity, such as the dimension of the sealing rings. Successful Cu/Sn IS bonding was realized at a low bonding temperature of 350degC under the optimal conditions. High shear strength of 27.7 MPa and excellent leak rate of around $2times10^{-9}$ atm cc/s have been achieved, which meet the requirements of MIL-STD-883E. Finally we designed and manufactured the micro resonator based on the Cu/Sn IS technology
Starting Page	1133
Ending Page	1137
File Size	4200298
Page Count	5
File Format	PDF
ISBN	1424401399
DOI	10.1109/NEMS.2006.334665
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-01-18
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tin Isothermal processes Packaging Micromechanical devices Wafer scale integration Nonhomogeneous media Design optimization Bonding processes Pattern analysis Temperature MEMS Isothermal solidification (IS) hermetic packaging
Content Type	Text
Resource Type	Article

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