NDLI: Zero-bias resonant sensor with an oxide-nitride layer as charge trap

Content Provider	IEEE Xplore Digital Library
Author	Kwan Kyu Park Kupnik, M. Lee, H.J. Oralkan, O. Khuri-Yakub, B.T.
Copyright Year	2010
Description	Author affiliation: Edward L. Ginzton Laboratory, Stanford University, CA 94305, U.S.A. (Kwan Kyu Park; Kupnik, M.; Lee, H.J.; Oralkan, O.; Khuri-Yakub, B.T.)
Abstract	We report on a capacitive resonant sensor with an oxide-nitride (ON) layer used as charge trap. The main idea is that we intentionally inject charges into the ON layer by biasing the device for 30 s with 160% of the pull-in voltage. We use a capacitive micromachined ultrasonic transducer (CMUT) to demonstrate this idea. The CMUT is fabricated via high temperature assisted direct wafer bonding after a local oxidation of silicon (LOCOS) to form evacuated cavities (vacuum gaps), and, thus, the device inherently has the ON layer beneath single-crystal silicon plates and vacuum gaps. Therefore, this device is ideal for this work. It allows us to test an elegant charge injection mechanism. By simply pulling in the plate a high electric field strength (∼ 8.9 MV/cm) is created in the ON layer for a designated time, which results in charge injection. These charges stay trapped in the ON layer and create an intrinsic electric field in the vacuum gaps, which would otherwise require an external dc bias voltage of 44% of the pull-in voltage. We successfully implemented a 5.3-MHz oscillator with this zero-bias resonator and achieved excellent noise performance of 0.06 Hz of Allan deviation.
Starting Page	1024
Ending Page	1028
File Size	984503
Page Count	5
File Format	PDF
ISBN	9781424481705
ISSN	19300395
e-ISBN	9781424481699
e-ISBN	9781424481682
DOI	10.1109/ICSENS.2010.5690742
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitance-voltage characteristics Silicon Electric fields Voltage measurement Parasitic capacitance Resonant frequency Oscillators
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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