NDLI: A laterally driven capacitive RF MEMS switch using parylene as dielectric layer

Content Provider	IEEE Xplore Digital Library
Author	Xunjun He Zhiqiu Lv Bo Liu Zhihong Li
Copyright Year	2010
Description	Author affiliation: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing, China (Xunjun He; Zhiqiu Lv; Bo Liu; Zhihong Li)
Abstract	In this paper, we propose a novel laterally driven RF MEMS capacitive switch using parylene as insulation dielectric, taking advantages of low temperature deposition and conformal coating of parylene. The switch consists of three parts, including CPW line, switching plates and actuated structures which are composed of single crystalline silicon (SCS) bonded on the glass substrate. Two actuated structures and switching plates are located at both lateral sides of the RF signal line, which is coated with parylene. The preliminary measured results show that the parylene can completely overlay the sidewall of the signal line and switching plates. The switching time from the open to the close state is 105µs, while 15.6µs from the close to the open state. For the switch with 80nm-thick parylene, the measured isolation is 16.2dB at 20GHz when both sides are under close state. These results verify that the parylene is a possible candidate to act as sidewall dielectric to realize the lateral capacitive switch.
Starting Page	257
Ending Page	260
File Size	2093134
Page Count	4
File Format	PDF
ISBN	9781424481705
ISSN	19300395
e-ISBN	9781424481699
e-ISBN	9781424481682
DOI	10.1109/ICSENS.2010.5689853
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Microswitches Dielectrics Contacts Capacitance Fabrication
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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