NDLI: CMOS open-gate ion sensitive field effect transistors for femto-molar dopamine detection

Content Provider	IEEE Xplore Digital Library
Author	Dong-Che Li Lu, M.S.-C.
Copyright Year	2010
Description	Author affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C. (Dong-Che Li; Lu, M.S.-C.)
Abstract	Open-gate ion-sensitive field-effect transistors (ISFET) are presented in this work to provide real-time ultrasensitive dopamine (DA) detection in the femto-molar (fM) range. The polysilicon gates of p-type FETs fabricated in a 0.35-µm CMOS (complementary metal-oxide-semiconductor) process were removed by a convenient post-CMOS process to expose the gate oxide for surface functionalization and biomolecule immobilization. Measured current value increased due to the produced negative charges from binding of the 4-carboxyphenylboronic acid (CPBA) and dopamine molecules. The thin gate oxide as the sensing interface significantly enhances the detection limit, which is comparable to or better than most nanowire-based ISFETs. A self-oscillating readout circuit was used to convert the ISFET current to a digital output for measurement of multiple sensors, showing the strength of the CMOS-based approach for sensor integration.
Starting Page	419
Ending Page	423
File Size	995241
Page Count	5
File Format	PDF
ISBN	9781424481705
ISSN	19300395
e-ISBN	9781424481699
e-ISBN	9781424481682
DOI	10.1109/ICSENS.2010.5690196
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensors Logic gates Nanobioscience CMOS integrated circuits Frequency modulation Current measurement Transistors
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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